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10 merged results for "AlGaN/GaN HEMTs"

Partial results: at least one source did not answer. Available results are shown rather than treating an upstream outage as zero matches.

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  1. Calibration-free and drift-robust AlGaN/GaN HEMT sensor arrays for intelligent pH detection.

    Zhu J, Zhang H, Guo D, Ji G · 2026 · Analytica chimica acta

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1016/j.aca.2026.345536

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    • cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
  2. High-Performance Flexible Ultraviolet Phototransistor Based on an AlGaN/GaN Heterojunction Membrane.

    Mondal RK, Xiong Z, Chen Z, Kim YJ · 2026 · ACS applied materials & interfaces

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1021/acsami.5c24023

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  3. Composite Crystalline Aluminum Nitride Passivation for Near-Junction Thermal Management in Gallium Nitride High-Electron-Mobility Transistors.

    Deng K, Wang J, Jing G, Wang X · 2026 · ACS applied materials & interfaces

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1021/acsami.6c12341

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    • cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
  4. Pd-Functionalized Graphene-Gated GaN HEMTs for High-Sensitive Gas Detection and Optoelectronic Recovery.

    Kim DW, Bae B, Kim T, Das SS · 2026 · ACS sensors

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1021/acssensors.6c01293

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    • cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
  5. AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection.

    Yu Y, Liu Y, Ren W, Liu Y · 2026 · Microsystems & nanoengineering

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.1038/s41378-026-01366-2

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    • supportingOpen access status: Normalized open-access status: open. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
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    • cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
  6. Step-graded AlGaN barrier engineering in AlGaN/GaN HEMTs for high-linearity low-noise RF amplifiers.

    Mounika B, Ajayan J, Mathew R, Karumuri SR · 2026 · Scientific reports

    limited evidence Transparent signal score 43/100 · policy 1.0.0

    Found in pubmed · DOI 10.1038/s41598-026-61548-w

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    • cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
  7. Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances.

    Pu T, Li X, Li L, Ao JP · 2026 · Materials (Basel, Switzerland)

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.3390/ma19112205

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    • cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
  8. Electrical Properties and Performance Enhancement of AlGaN/GaN/Si HEMTs.

    Mosbahi H, Ali MKM, Gassoumi M · 2026 · Micromachines

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.3390/mi17030297

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    • supportingOpen access status: Normalized open-access status: open. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
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    • cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
  9. Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal.

    Pan J, Ye X, Jiang R, Miao A · 2026 · Micromachines

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.3390/mi17040482

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    • cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
  10. Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al(2)O(3) Interlayer.

    Qiao G, Liu H, Feng C, Liao Y · 2026 · Nanomaterials (Basel, Switzerland)

    limited evidence Transparent signal score 45/100 · policy 1.0.0

    Found in pubmed · DOI 10.3390/nano16161027

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    • cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer