Tunnel Field‐Effect Transistors Based on III–V Semiconductors

Marco PALA

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DOI: 10.1002/9781394228713.ch1
Published: 2023-07-21
Container: Beyond‐CMOS
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/9781394228713.ch1,
  title = {Tunnel Field‐Effect Transistors Based on III–V Semiconductors},
  author = {Marco PALA},
  year = {2023},
  journal = {Beyond‐CMOS},
  doi = {10.1002/9781394228713.ch1},
  url = {https://doi.org/10.1002/9781394228713.ch1}
}

RIS

TY  - JOUR
TI  - Tunnel Field‐Effect Transistors Based on III–V Semiconductors
AU  - Marco PALA
PY  - 2023
JO  - Beyond‐CMOS
DO  - 10.1002/9781394228713.ch1
UR  - https://doi.org/10.1002/9781394228713.ch1
ER  -

APA

PALA, M. (2023). Tunnel Field‐Effect Transistors Based on III–V Semiconductors. Beyond‐CMOS. https://doi.org/10.1002/9781394228713.ch1

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crossref · retrieved 2026-09-25T15:31:02.661Z