Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.
- DOI
- 10.1002/adma.202413127
- Published
- 2025 Mar
- Container
- Advanced materials (Deerfield Beach, Fla.)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1002/adma.202413127,
title = {Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.},
author = {Ghosh S and Frentrup M and Hinz AM and Pomeroy JW and Field D and Wallis DJ and Kuball M and Oliver RA},
year = {2025},
journal = {Advanced materials (Deerfield Beach, Fla.)},
doi = {10.1002/adma.202413127},
url = {https://doi.org/10.1002/adma.202413127}
}RIS
TY - JOUR TI - Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon. AU - Ghosh S AU - Frentrup M AU - Hinz AM AU - Pomeroy JW AU - Field D AU - Wallis DJ AU - Kuball M AU - Oliver RA PY - 2025 JO - Advanced materials (Deerfield Beach, Fla.) DO - 10.1002/adma.202413127 UR - https://doi.org/10.1002/adma.202413127 ER -
APA
S, G., M, F., AM, H., JW, P., D, F., DJ, W., M, K., & RA, O. (2025). Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.202413127
Source records
- pubmed · retrieved 2026-09-25T13:21:10.671Z