Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.

Ghosh S, Frentrup M, Hinz AM, Pomeroy JW, Field D, Wallis DJ, Kuball M, Oliver RA

Open source

DOI
10.1002/adma.202413127
Published
2025 Mar
Container
Advanced materials (Deerfield Beach, Fla.)
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1002/adma.202413127,
  title = {Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.},
  author = {Ghosh S and Frentrup M and Hinz AM and Pomeroy JW and Field D and Wallis DJ and Kuball M and Oliver RA},
  year = {2025},
  journal = {Advanced materials (Deerfield Beach, Fla.)},
  doi = {10.1002/adma.202413127},
  url = {https://doi.org/10.1002/adma.202413127}
}

RIS

TY  - JOUR
TI  - Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.
AU  - Ghosh S
AU  - Frentrup M
AU  - Hinz AM
AU  - Pomeroy JW
AU  - Field D
AU  - Wallis DJ
AU  - Kuball M
AU  - Oliver RA
PY  - 2025
JO  - Advanced materials (Deerfield Beach, Fla.)
DO  - 10.1002/adma.202413127
UR  - https://doi.org/10.1002/adma.202413127
ER  - 

APA

S, G., M, F., AM, H., JW, P., D, F., DJ, W., M, K., & RA, O. (2025). Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.202413127

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