Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS(2) Field Effect Transistors.
- DOI
- 10.1002/adma.202523661
- Published
- 2026 Apr
- Container
- Advanced materials (Deerfield Beach, Fla.)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1002/adma.202523661,
title = {Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS(2) Field Effect Transistors.},
author = {Liu L and Yan H and Loh L and Paul KK and Sarkar S and Biswas D and Lee TL and Taniguchi T and Watanabe K and Chhowalla M and Wang Y},
year = {2026},
journal = {Advanced materials (Deerfield Beach, Fla.)},
doi = {10.1002/adma.202523661},
url = {https://doi.org/10.1002/adma.202523661}
}RIS
TY - JOUR TI - Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS(2) Field Effect Transistors. AU - Liu L AU - Yan H AU - Loh L AU - Paul KK AU - Sarkar S AU - Biswas D AU - Lee TL AU - Taniguchi T AU - Watanabe K AU - Chhowalla M AU - Wang Y PY - 2026 JO - Advanced materials (Deerfield Beach, Fla.) DO - 10.1002/adma.202523661 UR - https://doi.org/10.1002/adma.202523661 ER -
APA
L, L., H, Y., L, L., KK, P., S, S., D, B., TL, L., T, T., K, W., M, C., & Y, W. (2026). Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS(2) Field Effect Transistors.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.202523661
Source records
- pubmed · retrieved 2026-09-26T21:41:34.981Z