Adaptive Redox Resistive Memory Programming for Efficient and Robust Class-Incremental Learning.

Li Y, Yang J, Hou Q, Wang S, Liu S, Zhang H, Ye Z, Jiang J, Lin N, Xu X, Shang D, Qi X, Wang Z, Wang H

DOI: 10.1002/adma.202600025
Published: 2026 Aug
Container: Advanced materials (Deerfield Beach, Fla.)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/adma.202600025,
  title = {Adaptive Redox Resistive Memory Programming for Efficient and Robust Class-Incremental Learning.},
  author = {Li Y and Yang J and Hou Q and Wang S and Liu S and Zhang H and Ye Z and Jiang J and Lin N and Xu X and Shang D and Qi X and Wang Z and Wang H},
  year = {2026},
  journal = {Advanced materials (Deerfield Beach, Fla.)},
  doi = {10.1002/adma.202600025},
  url = {https://doi.org/10.1002/adma.202600025}
}

RIS

TY  - JOUR
TI  - Adaptive Redox Resistive Memory Programming for Efficient and Robust Class-Incremental Learning.
AU  - Li Y
AU  - Yang J
AU  - Hou Q
AU  - Wang S
AU  - Liu S
AU  - Zhang H
AU  - Ye Z
AU  - Jiang J
AU  - Lin N
AU  - Xu X
AU  - Shang D
AU  - Qi X
AU  - Wang Z
AU  - Wang H
PY  - 2026
JO  - Advanced materials (Deerfield Beach, Fla.)
DO  - 10.1002/adma.202600025
UR  - https://doi.org/10.1002/adma.202600025
ER  -

APA

Y, L., J, Y., Q, H., S, W., S, L., H, Z., Z, Y., J, J., N, L., X, X., D, S., X, Q., Z, W., & H, W. (2026). Adaptive Redox Resistive Memory Programming for Efficient and Robust Class-Incremental Learning.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.202600025

Source records

pubmed · retrieved 2026-09-25T01:00:31.340Z
europe-pmc · retrieved 2026-09-25T01:00:31.370Z