In‐situ p‐Doping of Nanometer Tellurium‐based Oxide for Room‐Temperature CMOS Circuits
- DOI
- 10.1002/adma.72813
- Published
- 2026-03-17
- Container
- Advanced Materials
- Publisher
- Wiley
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/adma.72813,
title = {In‐situ p‐Doping of Nanometer Tellurium‐based Oxide for Room‐Temperature CMOS Circuits},
author = {Mengfei He and Hamin Choi and Zhikai Le and Xiaomin Yang and Yanlin Huang and Youjin Reo and Sai Bai and Mingyang Wang and Huihui Zhu and Yong‐Young Noh and Ao Liu},
year = {2026},
journal = {Advanced Materials},
doi = {10.1002/adma.72813},
url = {https://doi.org/10.1002/adma.72813}
}RIS
TY - JOUR TI - In‐situ p‐Doping of Nanometer Tellurium‐based Oxide for Room‐Temperature CMOS Circuits AU - Mengfei He AU - Hamin Choi AU - Zhikai Le AU - Xiaomin Yang AU - Yanlin Huang AU - Youjin Reo AU - Sai Bai AU - Mingyang Wang AU - Huihui Zhu AU - Yong‐Young Noh AU - Ao Liu PY - 2026 JO - Advanced Materials DO - 10.1002/adma.72813 UR - https://doi.org/10.1002/adma.72813 ER -
APA
He, M., Choi, H., Le, Z., Yang, X., Huang, Y., Reo, Y., Bai, S., Wang, M., Zhu, H., Noh, Y., & Liu, A. (2026). In‐situ p‐Doping of Nanometer Tellurium‐based Oxide for Room‐Temperature CMOS Circuits. Advanced Materials. https://doi.org/10.1002/adma.72813
Source records
- crossref · retrieved 2026-11-07T16:06:51.197Z