High Throughput X-Ray Characterization of Defects in Wide-Bandgap Semiconductors.

Gray T, Garratt EJ, Zhang X, Luo S, Zhu H, Murukeshan J, Biswas A, Neupane MR, Pate BB, Birdwell AG, Ivanov TG, Vajtai R, Zhao Y, Ajayan PM

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DOI: 10.1002/adma.73678
Published: 2026 Jul
Container: Advanced materials (Deerfield Beach, Fla.)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/adma.73678,
  title = {High Throughput X-Ray Characterization of Defects in Wide-Bandgap Semiconductors.},
  author = {Gray T and Garratt EJ and Zhang X and Luo S and Zhu H and Murukeshan J and Biswas A and Neupane MR and Pate BB and Birdwell AG and Ivanov TG and Vajtai R and Zhao Y and Ajayan PM},
  year = {2026},
  journal = {Advanced materials (Deerfield Beach, Fla.)},
  doi = {10.1002/adma.73678},
  url = {https://doi.org/10.1002/adma.73678}
}

RIS

TY  - JOUR
TI  - High Throughput X-Ray Characterization of Defects in Wide-Bandgap Semiconductors.
AU  - Gray T
AU  - Garratt EJ
AU  - Zhang X
AU  - Luo S
AU  - Zhu H
AU  - Murukeshan J
AU  - Biswas A
AU  - Neupane MR
AU  - Pate BB
AU  - Birdwell AG
AU  - Ivanov TG
AU  - Vajtai R
AU  - Zhao Y
AU  - Ajayan PM
PY  - 2026
JO  - Advanced materials (Deerfield Beach, Fla.)
DO  - 10.1002/adma.73678
UR  - https://doi.org/10.1002/adma.73678
ER  -

APA

T, G., EJ, G., X, Z., S, L., H, Z., J, M., A, B., MR, N., BB, P., AG, B., TG, I., R, V., Y, Z., & PM, A. (2026). High Throughput X-Ray Characterization of Defects in Wide-Bandgap Semiconductors.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.73678

Source records

pubmed · retrieved 2026-09-24T23:23:46.296Z