Nitrogen-Incorporated Silicon Dioxide Interlayer Enables Pinhole-Reduced and Robust TOPCon With a High Implied Open-Circuit Voltage over 760 mV.

Liu Z, Lin C, Zhang Y, Zhang Y, Xie Y, Chen S, Zhou H, Lin Z, Liu W, Liao M, Xiao C, Ying Z, Yang X, Yang Z, Zeng Y, Ye J

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DOI: 10.1002/adma.73918
Published: 2026 Aug
Container: Advanced materials (Deerfield Beach, Fla.)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/adma.73918,
  title = {Nitrogen-Incorporated Silicon Dioxide Interlayer Enables Pinhole-Reduced and Robust TOPCon With a High Implied Open-Circuit Voltage over 760 mV.},
  author = {Liu Z and Lin C and Zhang Y and Zhang Y and Xie Y and Chen S and Zhou H and Lin Z and Liu W and Liao M and Xiao C and Ying Z and Yang X and Yang Z and Zeng Y and Ye J},
  year = {2026},
  journal = {Advanced materials (Deerfield Beach, Fla.)},
  doi = {10.1002/adma.73918},
  url = {https://doi.org/10.1002/adma.73918}
}

RIS

TY  - JOUR
TI  - Nitrogen-Incorporated Silicon Dioxide Interlayer Enables Pinhole-Reduced and Robust TOPCon With a High Implied Open-Circuit Voltage over 760 mV.
AU  - Liu Z
AU  - Lin C
AU  - Zhang Y
AU  - Zhang Y
AU  - Xie Y
AU  - Chen S
AU  - Zhou H
AU  - Lin Z
AU  - Liu W
AU  - Liao M
AU  - Xiao C
AU  - Ying Z
AU  - Yang X
AU  - Yang Z
AU  - Zeng Y
AU  - Ye J
PY  - 2026
JO  - Advanced materials (Deerfield Beach, Fla.)
DO  - 10.1002/adma.73918
UR  - https://doi.org/10.1002/adma.73918
ER  -

APA

Z, L., C, L., Y, Z., Y, Z., Y, X., S, C., H, Z., Z, L., W, L., M, L., C, X., Z, Y., X, Y., Z, Y., Y, Z., & J, Y. (2026). Nitrogen-Incorporated Silicon Dioxide Interlayer Enables Pinhole-Reduced and Robust TOPCon With a High Implied Open-Circuit Voltage over 760 mV.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.73918

Source records

pubmed · retrieved 2026-09-26T09:33:37.174Z
europe-pmc · retrieved 2026-09-26T09:33:37.194Z