Light-Written Nonvolatile Polarization via Defect-Engineered Charge Trapping.

Liu B, Li J, Zeng H, Wang X, Jiang J, Yu Y, Hu X, Zhao S, Wan L, Liu G, Zheng Y, Li Y

DOI: 10.1002/adma.73970
Published: 2026 Aug
Container: Advanced materials (Deerfield Beach, Fla.)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/adma.73970,
  title = {Light-Written Nonvolatile Polarization via Defect-Engineered Charge Trapping.},
  author = {Liu B and Li J and Zeng H and Wang X and Jiang J and Yu Y and Hu X and Zhao S and Wan L and Liu G and Zheng Y and Li Y},
  year = {2026},
  journal = {Advanced materials (Deerfield Beach, Fla.)},
  doi = {10.1002/adma.73970},
  url = {https://doi.org/10.1002/adma.73970}
}

RIS

TY  - JOUR
TI  - Light-Written Nonvolatile Polarization via Defect-Engineered Charge Trapping.
AU  - Liu B
AU  - Li J
AU  - Zeng H
AU  - Wang X
AU  - Jiang J
AU  - Yu Y
AU  - Hu X
AU  - Zhao S
AU  - Wan L
AU  - Liu G
AU  - Zheng Y
AU  - Li Y
PY  - 2026
JO  - Advanced materials (Deerfield Beach, Fla.)
DO  - 10.1002/adma.73970
UR  - https://doi.org/10.1002/adma.73970
ER  -

APA

B, L., J, L., H, Z., X, W., J, J., Y, Y., X, H., S, Z., L, W., G, L., Y, Z., & Y, L. (2026). Light-Written Nonvolatile Polarization via Defect-Engineered Charge Trapping.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.73970

Source records

pubmed · retrieved 2026-09-25T16:21:53.291Z