Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

Yoori Seo, Dongmin Kim, Yu Bin Park, Jangseop Lee, Tae Hoon Lee, Hyunsang Hwang

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DOI: 10.1002/adma.74743
Published: 2026-08-20
Container: Advanced Materials
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/adma.74743,
  title = {Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit},
  author = {Yoori Seo and Dongmin Kim and Yu Bin Park and Jangseop Lee and Tae Hoon Lee and Hyunsang Hwang},
  year = {2026},
  journal = {Advanced Materials},
  doi = {10.1002/adma.74743},
  url = {https://doi.org/10.1002/adma.74743}
}

RIS

TY  - JOUR
TI  - Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit
AU  - Yoori Seo
AU  - Dongmin Kim
AU  - Yu Bin Park
AU  - Jangseop Lee
AU  - Tae Hoon Lee
AU  - Hyunsang Hwang
PY  - 2026
JO  - Advanced Materials
DO  - 10.1002/adma.74743
UR  - https://doi.org/10.1002/adma.74743
ER  -

APA

Seo, Y., Kim, D., Park, Y. B., Lee, J., Lee, T. H., & Hwang, H. (2026). Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit. Advanced Materials. https://doi.org/10.1002/adma.74743

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crossref · retrieved 2026-09-24T22:08:16.348Z