Interfacial Gap Switching in MXene Ti <sub>3</sub> C <sub>2</sub> T <i> <sub>x</sub> </i> MoS <sub>2</sub> Memristors

Xiangming Xu, Sebastian Pazos, Dekang Zhu, Yue Ping, Ning Chu, Mario Lanza, Husam N. Alshareef

Open source

DOI
10.1002/adma.74953
Published
2026-09-10
Container
Advanced Materials
Publisher
Wiley
Open access
unknown

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BibTeX

@article{allodium:10.1002/adma.74953,
  title = {Interfacial Gap Switching in MXene Ti
                    <sub>3</sub>
                    C
                    <sub>2</sub>
                    T
                    <i>
                      <sub>x</sub>
                    </i>
                    MoS
                    <sub>2</sub>
                    Memristors},
  author = {Xiangming Xu and Sebastian Pazos and Dekang Zhu and Yue Ping and Ning Chu and Mario Lanza and Husam N. Alshareef},
  year = {2026},
  journal = {Advanced Materials},
  doi = {10.1002/adma.74953},
  url = {https://doi.org/10.1002/adma.74953}
}

RIS

TY  - JOUR
TI  - Interfacial Gap Switching in MXene Ti
                    <sub>3</sub>
                    C
                    <sub>2</sub>
                    T
                    <i>
                      <sub>x</sub>
                    </i>
                    MoS
                    <sub>2</sub>
                    Memristors
AU  - Xiangming Xu
AU  - Sebastian Pazos
AU  - Dekang Zhu
AU  - Yue Ping
AU  - Ning Chu
AU  - Mario Lanza
AU  - Husam N. Alshareef
PY  - 2026
JO  - Advanced Materials
DO  - 10.1002/adma.74953
UR  - https://doi.org/10.1002/adma.74953
ER  - 

APA

Xu, X., Pazos, S., Zhu, D., Ping, Y., Chu, N., Lanza, M., & Alshareef, H. N. (2026). Interfacial Gap Switching in MXene Ti <sub>3</sub> C <sub>2</sub> T <i> <sub>x</sub> </i> MoS <sub>2</sub> Memristors. Advanced Materials. https://doi.org/10.1002/adma.74953

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