Ferroelectric-Driven Nonvolatile Phase Transition in MoTe(2) Transistors With an Expanded Memory Window.

Shin YH, Yun DK, Kim SH, Yun HW, Choi HS, Park SH, Woo JM, Nguyen MC, Hong JW, Baek YJ, Li H, Yang H, Yu WJ

Open source

DOI
10.1002/adma.75046
Published
2026 Sep 17
Container
Advanced materials (Deerfield Beach, Fla.)
Publisher
Not recorded
Open access
unknown

Credibility signals

limited evidence Score 43/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1002/adma.75046,
  title = {Ferroelectric-Driven Nonvolatile Phase Transition in MoTe(2) Transistors With an Expanded Memory Window.},
  author = {Shin YH and Yun DK and Kim SH and Yun HW and Choi HS and Park SH and Woo JM and Nguyen MC and Hong JW and Baek YJ and Li H and Yang H and Yu WJ},
  year = {2026},
  journal = {Advanced materials (Deerfield Beach, Fla.)},
  doi = {10.1002/adma.75046},
  url = {https://doi.org/10.1002/adma.75046}
}

RIS

TY  - JOUR
TI  - Ferroelectric-Driven Nonvolatile Phase Transition in MoTe(2) Transistors With an Expanded Memory Window.
AU  - Shin YH
AU  - Yun DK
AU  - Kim SH
AU  - Yun HW
AU  - Choi HS
AU  - Park SH
AU  - Woo JM
AU  - Nguyen MC
AU  - Hong JW
AU  - Baek YJ
AU  - Li H
AU  - Yang H
AU  - Yu WJ
PY  - 2026
JO  - Advanced materials (Deerfield Beach, Fla.)
DO  - 10.1002/adma.75046
UR  - https://doi.org/10.1002/adma.75046
ER  - 

APA

YH, S., DK, Y., SH, K., HW, Y., HS, C., SH, P., JM, W., MC, N., JW, H., YJ, B., H, L., H, Y., & WJ, Y. (2026). Ferroelectric-Driven Nonvolatile Phase Transition in MoTe(2) Transistors With an Expanded Memory Window.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.75046

Source records