Ferroelectric-Driven Nonvolatile Phase Transition in MoTe(2) Transistors With an Expanded Memory Window.
- DOI
- 10.1002/adma.75046
- Published
- 2026 Sep 17
- Container
- Advanced materials (Deerfield Beach, Fla.)
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/adma.75046,
title = {Ferroelectric-Driven Nonvolatile Phase Transition in MoTe(2) Transistors With an Expanded Memory Window.},
author = {Shin YH and Yun DK and Kim SH and Yun HW and Choi HS and Park SH and Woo JM and Nguyen MC and Hong JW and Baek YJ and Li H and Yang H and Yu WJ},
year = {2026},
journal = {Advanced materials (Deerfield Beach, Fla.)},
doi = {10.1002/adma.75046},
url = {https://doi.org/10.1002/adma.75046}
}RIS
TY - JOUR TI - Ferroelectric-Driven Nonvolatile Phase Transition in MoTe(2) Transistors With an Expanded Memory Window. AU - Shin YH AU - Yun DK AU - Kim SH AU - Yun HW AU - Choi HS AU - Park SH AU - Woo JM AU - Nguyen MC AU - Hong JW AU - Baek YJ AU - Li H AU - Yang H AU - Yu WJ PY - 2026 JO - Advanced materials (Deerfield Beach, Fla.) DO - 10.1002/adma.75046 UR - https://doi.org/10.1002/adma.75046 ER -
APA
YH, S., DK, Y., SH, K., HW, Y., HS, C., SH, P., JM, W., MC, N., JW, H., YJ, B., H, L., H, Y., & WJ, Y. (2026). Ferroelectric-Driven Nonvolatile Phase Transition in MoTe(2) Transistors With an Expanded Memory Window.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.75046
Source records
- pubmed · retrieved 2026-09-25T03:41:35.713Z