Ternary Field-Effect Transistor by Antiferroelectric Gating.

Ren C, Wu Y, Zhao G, Lei Y, Ma S, Huang B, Li C, Huang M, Li J

DOI: 10.1002/adma.75141
Published: 2026 Sep 23
Container: Advanced materials (Deerfield Beach, Fla.)
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/adma.75141,
  title = {Ternary Field-Effect Transistor by Antiferroelectric Gating.},
  author = {Ren C and Wu Y and Zhao G and Lei Y and Ma S and Huang B and Li C and Huang M and Li J},
  year = {2026},
  journal = {Advanced materials (Deerfield Beach, Fla.)},
  doi = {10.1002/adma.75141},
  url = {https://doi.org/10.1002/adma.75141}
}

RIS

TY  - JOUR
TI  - Ternary Field-Effect Transistor by Antiferroelectric Gating.
AU  - Ren C
AU  - Wu Y
AU  - Zhao G
AU  - Lei Y
AU  - Ma S
AU  - Huang B
AU  - Li C
AU  - Huang M
AU  - Li J
PY  - 2026
JO  - Advanced materials (Deerfield Beach, Fla.)
DO  - 10.1002/adma.75141
UR  - https://doi.org/10.1002/adma.75141
ER  -

APA

C, R., Y, W., G, Z., Y, L., S, M., B, H., C, L., M, H., & J, L. (2026). Ternary Field-Effect Transistor by Antiferroelectric Gating.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.75141

Source records

pubmed · retrieved 2026-09-25T03:15:05.513Z