Breaking the Boltzmann Limit: A Review of Emerging Ultralow-Power Transistor Technologies.

Ma X, Tan X, Meng D, Peng LM, Qiu C

DOI: 10.1002/adma.75434
Published: 2026 Oct 18
Container: Advanced materials (Deerfield Beach, Fla.)
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/adma.75434,
  title = {Breaking the Boltzmann Limit: A Review of Emerging Ultralow-Power Transistor Technologies.},
  author = {Ma X and Tan X and Meng D and Peng LM and Qiu C},
  year = {2026},
  journal = {Advanced materials (Deerfield Beach, Fla.)},
  doi = {10.1002/adma.75434},
  url = {https://doi.org/10.1002/adma.75434}
}

RIS

TY  - JOUR
TI  - Breaking the Boltzmann Limit: A Review of Emerging Ultralow-Power Transistor Technologies.
AU  - Ma X
AU  - Tan X
AU  - Meng D
AU  - Peng LM
AU  - Qiu C
PY  - 2026
JO  - Advanced materials (Deerfield Beach, Fla.)
DO  - 10.1002/adma.75434
UR  - https://doi.org/10.1002/adma.75434
ER  -

APA

X, M., X, T., D, M., LM, P., & C, Q. (2026). Breaking the Boltzmann Limit: A Review of Emerging Ultralow-Power Transistor Technologies.. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.75434

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pubmed · retrieved 2026-11-10T06:34:48.014Z