Ferroionic‐Assisted, Charge‐Driven Polymorphic Phase Engineering for Multilevel Memristive Devices

Nayeon Kim, Chengqi Wei, Eunji Hwang, Woohyun Cho, Heemyoung Hong, Yongjoon Lee, Daeho Noh, Min Seok Jang, Zhongrui Wang, Heejun Yang

Open source

DOI: 10.1002/adma.75648
Published: 2026-11-06
Container: Advanced Materials
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/adma.75648,
  title = {Ferroionic‐Assisted, Charge‐Driven Polymorphic Phase Engineering for Multilevel Memristive Devices},
  author = {Nayeon Kim and Chengqi Wei and Eunji Hwang and Woohyun Cho and Heemyoung Hong and Yongjoon Lee and Daeho Noh and Min Seok Jang and Zhongrui Wang and Heejun Yang},
  year = {2026},
  journal = {Advanced Materials},
  doi = {10.1002/adma.75648},
  url = {https://doi.org/10.1002/adma.75648}
}

RIS

TY  - JOUR
TI  - Ferroionic‐Assisted, Charge‐Driven Polymorphic Phase Engineering for Multilevel Memristive Devices
AU  - Nayeon Kim
AU  - Chengqi Wei
AU  - Eunji Hwang
AU  - Woohyun Cho
AU  - Heemyoung Hong
AU  - Yongjoon Lee
AU  - Daeho Noh
AU  - Min Seok Jang
AU  - Zhongrui Wang
AU  - Heejun Yang
PY  - 2026
JO  - Advanced Materials
DO  - 10.1002/adma.75648
UR  - https://doi.org/10.1002/adma.75648
ER  -

APA

Kim, N., Wei, C., Hwang, E., Cho, W., Hong, H., Lee, Y., Noh, D., Jang, M. S., Wang, Z., & Yang, H. (2026). Ferroionic‐Assisted, Charge‐Driven Polymorphic Phase Engineering for Multilevel Memristive Devices. Advanced Materials. https://doi.org/10.1002/adma.75648

Source records

crossref · retrieved 2026-11-08T01:13:36.612Z