Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb(2)Te(3).

Wang XP, Li XB, Chen NK, Chen B, Rao F, Zhang S

Open source

DOI
10.1002/advs.202004185
Published
2021 Jul
Container
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1002/advs.202004185,
  title = {Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb(2)Te(3).},
  author = {Wang XP and Li XB and Chen NK and Chen B and Rao F and Zhang S},
  year = {2021},
  journal = {Advanced science (Weinheim, Baden-Wurttemberg, Germany)},
  doi = {10.1002/advs.202004185},
  url = {https://doi.org/10.1002/advs.202004185}
}

RIS

TY  - JOUR
TI  - Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb(2)Te(3).
AU  - Wang XP
AU  - Li XB
AU  - Chen NK
AU  - Chen B
AU  - Rao F
AU  - Zhang S
PY  - 2021
JO  - Advanced science (Weinheim, Baden-Wurttemberg, Germany)
DO  - 10.1002/advs.202004185
UR  - https://doi.org/10.1002/advs.202004185
ER  - 

APA

XP, W., XB, L., NK, C., B, C., F, R., & S, Z. (2021). Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb(2)Te(3).. Advanced science (Weinheim, Baden-Wurttemberg, Germany). https://doi.org/10.1002/advs.202004185

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