Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO(2)/Si(100) for Monolithic Optoelectronic Integration.

Liang D, Jiang B, Liu Z, Chen Z, Gao Y, Yang S, He R, Wang L, Ran J, Wang J, Gao P, Li J, Liu Z, Sun J, Wei T

DOI: 10.1002/advs.202305576
Published: 2024 May
Container: Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/advs.202305576,
  title = {Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO(2)/Si(100) for Monolithic Optoelectronic Integration.},
  author = {Liang D and Jiang B and Liu Z and Chen Z and Gao Y and Yang S and He R and Wang L and Ran J and Wang J and Gao P and Li J and Liu Z and Sun J and Wei T},
  year = {2024},
  journal = {Advanced science (Weinheim, Baden-Wurttemberg, Germany)},
  doi = {10.1002/advs.202305576},
  url = {https://doi.org/10.1002/advs.202305576}
}

RIS

TY  - JOUR
TI  - Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO(2)/Si(100) for Monolithic Optoelectronic Integration.
AU  - Liang D
AU  - Jiang B
AU  - Liu Z
AU  - Chen Z
AU  - Gao Y
AU  - Yang S
AU  - He R
AU  - Wang L
AU  - Ran J
AU  - Wang J
AU  - Gao P
AU  - Li J
AU  - Liu Z
AU  - Sun J
AU  - Wei T
PY  - 2024
JO  - Advanced science (Weinheim, Baden-Wurttemberg, Germany)
DO  - 10.1002/advs.202305576
UR  - https://doi.org/10.1002/advs.202305576
ER  -

APA

D, L., B, J., Z, L., Z, C., Y, G., S, Y., R, H., L, W., J, R., J, W., P, G., J, L., Z, L., J, S., & T, W. (2024). Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO(2)/Si(100) for Monolithic Optoelectronic Integration.. Advanced science (Weinheim, Baden-Wurttemberg, Germany). https://doi.org/10.1002/advs.202305576

Source records

pubmed · retrieved 2026-09-25T09:19:32.307Z