Local p- and n-Type Doping of an Oxide Semiconductor via Electric-Field-Driven Defect Migration.
- DOI
- 10.1002/advs.202506629
- Published
- 2025 Nov
- Container
- Advanced science (Weinheim, Baden-Wurttemberg, Germany)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1002/advs.202506629,
title = {Local p- and n-Type Doping of an Oxide Semiconductor via Electric-Field-Driven Defect Migration.},
author = {He J and Ludacka U and Hunnestad KA and Småbråten DR and Shapovalov K and Vullum PE and Hatzoglou C and Evans DM and Roede ED and Yan Z and Bourret E and Selbach SM and Gao D and Akola J and Meier D},
year = {2025},
journal = {Advanced science (Weinheim, Baden-Wurttemberg, Germany)},
doi = {10.1002/advs.202506629},
url = {https://doi.org/10.1002/advs.202506629}
}RIS
TY - JOUR TI - Local p- and n-Type Doping of an Oxide Semiconductor via Electric-Field-Driven Defect Migration. AU - He J AU - Ludacka U AU - Hunnestad KA AU - Småbråten DR AU - Shapovalov K AU - Vullum PE AU - Hatzoglou C AU - Evans DM AU - Roede ED AU - Yan Z AU - Bourret E AU - Selbach SM AU - Gao D AU - Akola J AU - Meier D PY - 2025 JO - Advanced science (Weinheim, Baden-Wurttemberg, Germany) DO - 10.1002/advs.202506629 UR - https://doi.org/10.1002/advs.202506629 ER -
APA
J, H., U, L., KA, H., DR, S., K, S., PE, V., C, H., DM, E., ED, R., Z, Y., E, B., SM, S., D, G., J, A., & D, M. (2025). Local p- and n-Type Doping of an Oxide Semiconductor via Electric-Field-Driven Defect Migration.. Advanced science (Weinheim, Baden-Wurttemberg, Germany). https://doi.org/10.1002/advs.202506629