Enhanced Superconductivity in X 4 H 15 Compounds via Hole‐Doping at Ambient Pressure

Kun Gao, Wenwen Cui, Tiago F. T. Cerqueira, Hai‐Chen Wang, Silvana Botti, Miguel A. L. Marques

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DOI: 10.1002/advs.202508419
Published: 2025-07-27
Container: Advanced Science
Publisher: Wiley
Open access: unknown

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BibTeX

@article{allodium:10.1002/advs.202508419,
  title = {Enhanced Superconductivity in X
                    <sub>4</sub>
                    H
                    <sub>15</sub>
                    Compounds via Hole‐Doping at Ambient Pressure},
  author = {Kun Gao and Wenwen Cui and Tiago F. T. Cerqueira and Hai‐Chen Wang and Silvana Botti and Miguel A. L. Marques},
  year = {2025},
  journal = {Advanced Science},
  doi = {10.1002/advs.202508419},
  url = {https://doi.org/10.1002/advs.202508419}
}

RIS

TY  - JOUR
TI  - Enhanced Superconductivity in X
                    <sub>4</sub>
                    H
                    <sub>15</sub>
                    Compounds via Hole‐Doping at Ambient Pressure
AU  - Kun Gao
AU  - Wenwen Cui
AU  - Tiago F. T. Cerqueira
AU  - Hai‐Chen Wang
AU  - Silvana Botti
AU  - Miguel A. L. Marques
PY  - 2025
JO  - Advanced Science
DO  - 10.1002/advs.202508419
UR  - https://doi.org/10.1002/advs.202508419
ER  -

APA

Gao, K., Cui, W., Cerqueira, T. F. T., Wang, H., Botti, S., & Marques, M. A. L. (2025). Enhanced Superconductivity in X 4 H 15 Compounds via Hole‐Doping at Ambient Pressure. Advanced Science. https://doi.org/10.1002/advs.202508419

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crossref · retrieved 2026-09-25T12:17:05.027Z

Enhanced Superconductivity in X <sub>4</sub> H <sub>15</sub> Compounds via Hole‐Doping at Ambient Pressure

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