Defect-Free Sb-Doping in Bi(2)O(2)Se Achieves Two-Order-of-Magnitude Reduction in Saturation Intensity While Preserving High Carrier Mobility.

Tang Q, Pan Z, Chu H, Pan H, Li D

Open source

DOI
10.1002/advs.202518454
Published
2026 Feb
Container
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Publisher
Not recorded
Open access
yes

Credibility signals

uncertain Score 53/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1002/advs.202518454,
  title = {Defect-Free Sb-Doping in Bi(2)O(2)Se Achieves Two-Order-of-Magnitude Reduction in Saturation Intensity While Preserving High Carrier Mobility.},
  author = {Tang Q and Pan Z and Chu H and Pan H and Li D},
  year = {2026},
  journal = {Advanced science (Weinheim, Baden-Wurttemberg, Germany)},
  doi = {10.1002/advs.202518454},
  url = {https://doi.org/10.1002/advs.202518454}
}

RIS

TY  - JOUR
TI  - Defect-Free Sb-Doping in Bi(2)O(2)Se Achieves Two-Order-of-Magnitude Reduction in Saturation Intensity While Preserving High Carrier Mobility.
AU  - Tang Q
AU  - Pan Z
AU  - Chu H
AU  - Pan H
AU  - Li D
PY  - 2026
JO  - Advanced science (Weinheim, Baden-Wurttemberg, Germany)
DO  - 10.1002/advs.202518454
UR  - https://doi.org/10.1002/advs.202518454
ER  - 

APA

Q, T., Z, P., H, C., H, P., & D, L. (2026). Defect-Free Sb-Doping in Bi(2)O(2)Se Achieves Two-Order-of-Magnitude Reduction in Saturation Intensity While Preserving High Carrier Mobility.. Advanced science (Weinheim, Baden-Wurttemberg, Germany). https://doi.org/10.1002/advs.202518454

Source records