Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications

Junseok Kim, Hyeonjung Park, Changwoo Han, Huiseong Shin, Myeongjae Choi, Changhwan Shin

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DOI: 10.1002/advs.202519686
Published: 2026-02-09
Container: Advanced Science
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/advs.202519686,
  title = {Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications},
  author = {Junseok Kim and Hyeonjung Park and Changwoo Han and Huiseong Shin and Myeongjae Choi and Changhwan Shin},
  year = {2026},
  journal = {Advanced Science},
  doi = {10.1002/advs.202519686},
  url = {https://doi.org/10.1002/advs.202519686}
}

RIS

TY  - JOUR
TI  - Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications
AU  - Junseok Kim
AU  - Hyeonjung Park
AU  - Changwoo Han
AU  - Huiseong Shin
AU  - Myeongjae Choi
AU  - Changhwan Shin
PY  - 2026
JO  - Advanced Science
DO  - 10.1002/advs.202519686
UR  - https://doi.org/10.1002/advs.202519686
ER  -

APA

Kim, J., Park, H., Han, C., Shin, H., Choi, M., & Shin, C. (2026). Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications. Advanced Science. https://doi.org/10.1002/advs.202519686

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crossref · retrieved 2026-11-10T06:45:00.576Z