Threshold‐Voltage Modulation and N <sub>2</sub> O Plasma Passivation for Enhanced Retention and Memory Window in Capacitorless 2T0C DRAM Oxide Thin‐Film Transistors

Chahwan Yang, Mirinae Lee, Junghoon Han, Sooji Nam

Open source

DOI: 10.1002/advs.202523540
Published: 2026-03-03
Container: Advanced Science
Publisher: Wiley
Open access: unknown

Credibility signals

uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

supportingDOI registered: A matching record was returned by Crossref. Source: Crossref; license: CC0 metadata
supportingDOI resolves: A matching record was returned by Crossref. Source: Crossref; license: CC0 metadata
not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility. Source: DOAJ; license: CC0
not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredROR affiliation: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredOpen access status: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredPublication license: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredPublication version: A publication version was supplied but is not scored. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
supportingMetadata completeness: All 6 scored descriptive metadata groups are present. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer

Cite this work

BibTeX

@article{allodium:10.1002/advs.202523540,
  title = {Threshold‐Voltage Modulation and N
                    <sub>2</sub>
                    O Plasma Passivation for Enhanced Retention and Memory Window in Capacitorless 2T0C DRAM Oxide Thin‐Film Transistors},
  author = {Chahwan Yang and Mirinae Lee and Junghoon Han and Sooji Nam},
  year = {2026},
  journal = {Advanced Science},
  doi = {10.1002/advs.202523540},
  url = {https://doi.org/10.1002/advs.202523540}
}

RIS

TY  - JOUR
TI  - Threshold‐Voltage Modulation and N
                    <sub>2</sub>
                    O Plasma Passivation for Enhanced Retention and Memory Window in Capacitorless 2T0C DRAM Oxide Thin‐Film Transistors
AU  - Chahwan Yang
AU  - Mirinae Lee
AU  - Junghoon Han
AU  - Sooji Nam
PY  - 2026
JO  - Advanced Science
DO  - 10.1002/advs.202523540
UR  - https://doi.org/10.1002/advs.202523540
ER  -

APA

Yang, C., Lee, M., Han, J., & Nam, S. (2026). Threshold‐Voltage Modulation and N <sub>2</sub> O Plasma Passivation for Enhanced Retention and Memory Window in Capacitorless 2T0C DRAM Oxide Thin‐Film Transistors. Advanced Science. https://doi.org/10.1002/advs.202523540

Source records

crossref · retrieved 2026-09-25T17:45:17.595Z