Polarization‐Enabled Piezoelectric Tellurium–Selenium (Te x Se 1– x ) Thin Films for Memory Switching and Artificial Synaptic Functions

Chia‐Chen Chung, Mayur Chaudhary, Chia‐Hung Lo, Po‐Chien Lai, You‐Jie Lin, Ruei‐Hong Cyu, Yu‐Ren Peng, Bing‐Ni Gu, Zhao‐Feng Lou, Quynh Thi Le, Yi‐Jen Yu, Yen‐Fu Lin, Min‐Hung Lee, Ying‐Hao Chu, Chang‐Hong Shen, Der‐Hsien Lien, Yu‐Lun Chueh

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DOI: 10.1002/advs.202524308
Published: 2026-05-27
Container: Advanced Science
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/advs.202524308,
  title = {Polarization‐Enabled Piezoelectric Tellurium–Selenium (Te
                    <i>
                      <sub>x</sub>
                    </i>
                    Se
                    <sub>1–</sub>
                    <i>
                      <sub>x</sub>
                    </i>
                    ) Thin Films for Memory Switching and Artificial Synaptic Functions},
  author = {Chia‐Chen Chung and Mayur Chaudhary and Chia‐Hung Lo and Po‐Chien Lai and You‐Jie Lin and Ruei‐Hong Cyu and Yu‐Ren Peng and Bing‐Ni Gu and Zhao‐Feng Lou and Quynh Thi Le and Yi‐Jen Yu and Yen‐Fu Lin and Min‐Hung Lee and Ying‐Hao Chu and Chang‐Hong Shen and Der‐Hsien Lien and Yu‐Lun Chueh},
  year = {2026},
  journal = {Advanced Science},
  doi = {10.1002/advs.202524308},
  url = {https://doi.org/10.1002/advs.202524308}
}

RIS

TY  - JOUR
TI  - Polarization‐Enabled Piezoelectric Tellurium–Selenium (Te
                    <i>
                      <sub>x</sub>
                    </i>
                    Se
                    <sub>1–</sub>
                    <i>
                      <sub>x</sub>
                    </i>
                    ) Thin Films for Memory Switching and Artificial Synaptic Functions
AU  - Chia‐Chen Chung
AU  - Mayur Chaudhary
AU  - Chia‐Hung Lo
AU  - Po‐Chien Lai
AU  - You‐Jie Lin
AU  - Ruei‐Hong Cyu
AU  - Yu‐Ren Peng
AU  - Bing‐Ni Gu
AU  - Zhao‐Feng Lou
AU  - Quynh Thi Le
AU  - Yi‐Jen Yu
AU  - Yen‐Fu Lin
AU  - Min‐Hung Lee
AU  - Ying‐Hao Chu
AU  - Chang‐Hong Shen
AU  - Der‐Hsien Lien
AU  - Yu‐Lun Chueh
PY  - 2026
JO  - Advanced Science
DO  - 10.1002/advs.202524308
UR  - https://doi.org/10.1002/advs.202524308
ER  -

APA

Chung, C., Chaudhary, M., Lo, C., Lai, P., Lin, Y., Cyu, R., Peng, Y., Gu, B., Lou, Z., Le, Q. T., Yu, Y., Lin, Y., Lee, M., Chu, Y., Shen, C., Lien, D., & Chueh, Y. (2026). Polarization‐Enabled Piezoelectric Tellurium–Selenium (Te x Se 1– x ) Thin Films for Memory Switching and Artificial Synaptic Functions. Advanced Science. https://doi.org/10.1002/advs.202524308

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crossref · retrieved 2026-09-25T10:24:07.690Z

Polarization‐Enabled Piezoelectric Tellurium–Selenium (Te <i> <sub>x</sub> </i> Se <sub>1–</sub> <i> <sub>x</sub> </i> ) Thin Films for Memory Switching and Artificial Synaptic Functions

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