Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory
- DOI
- 10.1002/advs.74517
- Published
- 2026-02-27
- Container
- Advanced Science
- Publisher
- Wiley
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/advs.74517,
title = {Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory},
author = {Sung‐Ho Park and Ryun‐Han Koo and Jonghyun Ko and Jiseong Im and Yeongheon Yang and Mingyun Oh and Dongbeen Shin and Gyuweon Jung and Jong‐Ho Lee},
year = {2026},
journal = {Advanced Science},
doi = {10.1002/advs.74517},
url = {https://doi.org/10.1002/advs.74517}
}RIS
TY - JOUR TI - Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory AU - Sung‐Ho Park AU - Ryun‐Han Koo AU - Jonghyun Ko AU - Jiseong Im AU - Yeongheon Yang AU - Mingyun Oh AU - Dongbeen Shin AU - Gyuweon Jung AU - Jong‐Ho Lee PY - 2026 JO - Advanced Science DO - 10.1002/advs.74517 UR - https://doi.org/10.1002/advs.74517 ER -
APA
Park, S., Koo, R., Ko, J., Im, J., Yang, Y., Oh, M., Shin, D., Jung, G., & Lee, J. (2026). Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory. Advanced Science. https://doi.org/10.1002/advs.74517
Source records
- crossref · retrieved 2026-09-24T23:43:55.547Z