Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory

Sung‐Ho Park, Ryun‐Han Koo, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee

Open source

DOI
10.1002/advs.74517
Published
2026-02-27
Container
Advanced Science
Publisher
Wiley
Open access
unknown

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BibTeX

@article{allodium:10.1002/advs.74517,
  title = {Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory},
  author = {Sung‐Ho Park and Ryun‐Han Koo and Jonghyun Ko and Jiseong Im and Yeongheon Yang and Mingyun Oh and Dongbeen Shin and Gyuweon Jung and Jong‐Ho Lee},
  year = {2026},
  journal = {Advanced Science},
  doi = {10.1002/advs.74517},
  url = {https://doi.org/10.1002/advs.74517}
}

RIS

TY  - JOUR
TI  - Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory
AU  - Sung‐Ho Park
AU  - Ryun‐Han Koo
AU  - Jonghyun Ko
AU  - Jiseong Im
AU  - Yeongheon Yang
AU  - Mingyun Oh
AU  - Dongbeen Shin
AU  - Gyuweon Jung
AU  - Jong‐Ho Lee
PY  - 2026
JO  - Advanced Science
DO  - 10.1002/advs.74517
UR  - https://doi.org/10.1002/advs.74517
ER  - 

APA

Park, S., Koo, R., Ko, J., Im, J., Yang, Y., Oh, M., Shin, D., Jung, G., & Lee, J. (2026). Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory. Advanced Science. https://doi.org/10.1002/advs.74517

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