Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim

Open source

DOI
10.1002/advs.77076
Published
2026-08-11
Container
Advanced Science
Publisher
Wiley
Open access
unknown

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BibTeX

@article{allodium:10.1002/advs.77076,
  title = {Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing},
  author = {Seeun Lee and Jaewon Park and Nawoon Kim and Seohyeon Ju and Seong‐Cheol Jang and Hyun‐Suk Kim and Sungjun Kim},
  year = {2026},
  journal = {Advanced Science},
  doi = {10.1002/advs.77076},
  url = {https://doi.org/10.1002/advs.77076}
}

RIS

TY  - JOUR
TI  - Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing
AU  - Seeun Lee
AU  - Jaewon Park
AU  - Nawoon Kim
AU  - Seohyeon Ju
AU  - Seong‐Cheol Jang
AU  - Hyun‐Suk Kim
AU  - Sungjun Kim
PY  - 2026
JO  - Advanced Science
DO  - 10.1002/advs.77076
UR  - https://doi.org/10.1002/advs.77076
ER  - 

APA

Lee, S., Park, J., Kim, N., Ju, S., Jang, S., Kim, H., & Kim, S. (2026). Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing. Advanced Science. https://doi.org/10.1002/advs.77076

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