Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing
- DOI
- 10.1002/advs.77076
- Published
- 2026-08-11
- Container
- Advanced Science
- Publisher
- Wiley
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/advs.77076,
title = {Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing},
author = {Seeun Lee and Jaewon Park and Nawoon Kim and Seohyeon Ju and Seong‐Cheol Jang and Hyun‐Suk Kim and Sungjun Kim},
year = {2026},
journal = {Advanced Science},
doi = {10.1002/advs.77076},
url = {https://doi.org/10.1002/advs.77076}
}RIS
TY - JOUR TI - Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing AU - Seeun Lee AU - Jaewon Park AU - Nawoon Kim AU - Seohyeon Ju AU - Seong‐Cheol Jang AU - Hyun‐Suk Kim AU - Sungjun Kim PY - 2026 JO - Advanced Science DO - 10.1002/advs.77076 UR - https://doi.org/10.1002/advs.77076 ER -
APA
Lee, S., Park, J., Kim, N., Ju, S., Jang, S., Kim, H., & Kim, S. (2026). Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing. Advanced Science. https://doi.org/10.1002/advs.77076
Source records
- crossref · retrieved 2026-09-24T21:34:28.398Z