Triple-Level Content-Addressable Vertical NAND Flash Memory.

Park SH, Im J, Yang Y, Koo RH, Ko J, Oh M, Shin D, Jung G, Lee JH

DOI: 10.1002/advs.77390
Published: 2026 Aug 24
Container: Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/advs.77390,
  title = {Triple-Level Content-Addressable Vertical NAND Flash Memory.},
  author = {Park SH and Im J and Yang Y and Koo RH and Ko J and Oh M and Shin D and Jung G and Lee JH},
  year = {2026},
  journal = {Advanced science (Weinheim, Baden-Wurttemberg, Germany)},
  doi = {10.1002/advs.77390},
  url = {https://doi.org/10.1002/advs.77390}
}

RIS

TY  - JOUR
TI  - Triple-Level Content-Addressable Vertical NAND Flash Memory.
AU  - Park SH
AU  - Im J
AU  - Yang Y
AU  - Koo RH
AU  - Ko J
AU  - Oh M
AU  - Shin D
AU  - Jung G
AU  - Lee JH
PY  - 2026
JO  - Advanced science (Weinheim, Baden-Wurttemberg, Germany)
DO  - 10.1002/advs.77390
UR  - https://doi.org/10.1002/advs.77390
ER  -

APA

SH, P., J, I., Y, Y., RH, K., J, K., M, O., D, S., G, J., & JH, L. (2026). Triple-Level Content-Addressable Vertical NAND Flash Memory.. Advanced science (Weinheim, Baden-Wurttemberg, Germany). https://doi.org/10.1002/advs.77390

Source records

pubmed · retrieved 2026-09-24T23:43:04.095Z