Gate Metal-Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems.

Yoon J, Jang J, Jung H, Seong D, Kim D, Jeon Y, Koo JH, Won SM, Son D

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DOI
10.1002/advs.77505
Published
2026 Aug 30
Container
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1002/advs.77505,
  title = {Gate Metal-Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems.},
  author = {Yoon J and Jang J and Jung H and Seong D and Kim D and Jeon Y and Koo JH and Won SM and Son D},
  year = {2026},
  journal = {Advanced science (Weinheim, Baden-Wurttemberg, Germany)},
  doi = {10.1002/advs.77505},
  url = {https://doi.org/10.1002/advs.77505}
}

RIS

TY  - JOUR
TI  - Gate Metal-Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems.
AU  - Yoon J
AU  - Jang J
AU  - Jung H
AU  - Seong D
AU  - Kim D
AU  - Jeon Y
AU  - Koo JH
AU  - Won SM
AU  - Son D
PY  - 2026
JO  - Advanced science (Weinheim, Baden-Wurttemberg, Germany)
DO  - 10.1002/advs.77505
UR  - https://doi.org/10.1002/advs.77505
ER  - 

APA

J, Y., J, J., H, J., D, S., D, K., Y, J., JH, K., SM, W., & D, S. (2026). Gate Metal-Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems.. Advanced science (Weinheim, Baden-Wurttemberg, Germany). https://doi.org/10.1002/advs.77505

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