Gate Metal-Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems.
- DOI
- 10.1002/advs.77505
- Published
- 2026 Aug 30
- Container
- Advanced science (Weinheim, Baden-Wurttemberg, Germany)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1002/advs.77505,
title = {Gate Metal-Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems.},
author = {Yoon J and Jang J and Jung H and Seong D and Kim D and Jeon Y and Koo JH and Won SM and Son D},
year = {2026},
journal = {Advanced science (Weinheim, Baden-Wurttemberg, Germany)},
doi = {10.1002/advs.77505},
url = {https://doi.org/10.1002/advs.77505}
}RIS
TY - JOUR TI - Gate Metal-Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems. AU - Yoon J AU - Jang J AU - Jung H AU - Seong D AU - Kim D AU - Jeon Y AU - Koo JH AU - Won SM AU - Son D PY - 2026 JO - Advanced science (Weinheim, Baden-Wurttemberg, Germany) DO - 10.1002/advs.77505 UR - https://doi.org/10.1002/advs.77505 ER -
APA
J, Y., J, J., H, J., D, S., D, K., Y, J., JH, K., SM, W., & D, S. (2026). Gate Metal-Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems.. Advanced science (Weinheim, Baden-Wurttemberg, Germany). https://doi.org/10.1002/advs.77505
Source records
- pubmed · retrieved 2026-09-25T04:44:08.274Z