Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic-Level Engineering.

Yu L, Zhang H, Qin H, Zhang Y, Xu J, Zhao Y, Ding D, Xu J, Shin S, Zhang Z, Qin G

DOI: 10.1002/advs.77516
Published: 2026 Oct 12
Container: Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/advs.77516,
  title = {Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic-Level Engineering.},
  author = {Yu L and Zhang H and Qin H and Zhang Y and Xu J and Zhao Y and Ding D and Xu J and Shin S and Zhang Z and Qin G},
  year = {2026},
  journal = {Advanced science (Weinheim, Baden-Wurttemberg, Germany)},
  doi = {10.1002/advs.77516},
  url = {https://doi.org/10.1002/advs.77516}
}

RIS

TY  - JOUR
TI  - Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic-Level Engineering.
AU  - Yu L
AU  - Zhang H
AU  - Qin H
AU  - Zhang Y
AU  - Xu J
AU  - Zhao Y
AU  - Ding D
AU  - Xu J
AU  - Shin S
AU  - Zhang Z
AU  - Qin G
PY  - 2026
JO  - Advanced science (Weinheim, Baden-Wurttemberg, Germany)
DO  - 10.1002/advs.77516
UR  - https://doi.org/10.1002/advs.77516
ER  -

APA

L, Y., H, Z., H, Q., Y, Z., J, X., Y, Z., D, D., J, X., S, S., Z, Z., & G, Q. (2026). Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic-Level Engineering.. Advanced science (Weinheim, Baden-Wurttemberg, Germany). https://doi.org/10.1002/advs.77516

Source records

pubmed · retrieved 2026-11-10T08:12:25.809Z