High Performance Amorphous In<sub>0.5</sub>Ga<sub>0.5</sub>O Thin‐Film Transistor Embedded with Nanocrystalline In<sub>2</sub>O<sub>3</sub> Dots for Flexible Display Application
- DOI
- 10.1002/aelm.202300169
- Published
- 2023-07-08
- Container
- Advanced Electronic Materials
- Publisher
- Wiley
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/aelm.202300169,
title = {High Performance Amorphous In<sub>0.5</sub>Ga<sub>0.5</sub>O Thin‐Film Transistor Embedded with Nanocrystalline In<sub>2</sub>O<sub>3</sub> Dots for Flexible Display Application},
author = {Md. Hasnat Rabbi and Arqum Ali and Chanju Park and Jin Jang},
year = {2023},
journal = {Advanced Electronic Materials},
doi = {10.1002/aelm.202300169},
url = {https://doi.org/10.1002/aelm.202300169}
}RIS
TY - JOUR TI - High Performance Amorphous In<sub>0.5</sub>Ga<sub>0.5</sub>O Thin‐Film Transistor Embedded with Nanocrystalline In<sub>2</sub>O<sub>3</sub> Dots for Flexible Display Application AU - Md. Hasnat Rabbi AU - Arqum Ali AU - Chanju Park AU - Jin Jang PY - 2023 JO - Advanced Electronic Materials DO - 10.1002/aelm.202300169 UR - https://doi.org/10.1002/aelm.202300169 ER -
APA
Rabbi, M. H., Ali, A., Park, C., & Jang, J. (2023). High Performance Amorphous In<sub>0.5</sub>Ga<sub>0.5</sub>O Thin‐Film Transistor Embedded with Nanocrystalline In<sub>2</sub>O<sub>3</sub> Dots for Flexible Display Application. Advanced Electronic Materials. https://doi.org/10.1002/aelm.202300169
Source records
- crossref · retrieved 2026-11-10T14:31:19.886Z