2D Multiferroics in As‐Substituted Bilayer α‐In2Se3 with Enhanced Magnetic Moments for Next‐Generation Nonvolatile Memory Device

Zhikuan Wang, Ge Xu, Xinxin Jiang, Lei Yang, Quan Gao, Chong Li, Dongmei Li, Desheng Liu, Bin Cui

Open source

DOI: 10.1002/aelm.202300642
Published: 05
Container: Advanced Electronic Materials
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/aelm.202300642,
  title = {2D Multiferroics in As‐Substituted Bilayer α‐In2Se3 with Enhanced Magnetic Moments for Next‐Generation Nonvolatile Memory Device},
  author = {Zhikuan Wang and Ge Xu and Xinxin Jiang and Lei Yang and Quan Gao and Chong Li and Dongmei Li and Desheng Liu and Bin Cui},
  year = {2024},
  journal = {Advanced Electronic Materials},
  doi = {10.1002/aelm.202300642},
  url = {https://doi.org/10.1002/aelm.202300642}
}

RIS

TY  - JOUR
TI  - 2D Multiferroics in As‐Substituted Bilayer α‐In2Se3 with Enhanced Magnetic Moments for Next‐Generation Nonvolatile Memory Device
AU  - Zhikuan Wang
AU  - Ge Xu
AU  - Xinxin Jiang
AU  - Lei Yang
AU  - Quan Gao
AU  - Chong Li
AU  - Dongmei Li
AU  - Desheng Liu
AU  - Bin Cui
PY  - 2024
JO  - Advanced Electronic Materials
DO  - 10.1002/aelm.202300642
UR  - https://doi.org/10.1002/aelm.202300642
ER  -

APA

Wang, Z., Xu, G., Jiang, X., Yang, L., Gao, Q., Li, C., Li, D., Liu, D., & Cui, B. (2024). 2D Multiferroics in As‐Substituted Bilayer α‐In2Se3 with Enhanced Magnetic Moments for Next‐Generation Nonvolatile Memory Device. Advanced Electronic Materials. https://doi.org/10.1002/aelm.202300642

Source records

doaj · retrieved 2026-09-25T10:22:02.987Z