Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Ke Hu, Zean Guo, Jiawei Wang, Congyan Lu, Mingliang Wang, Tianyuan Wang, Fuxi Liao, Guanhua Yang, Nianduan Lu, Ling Li

Open source

DOI: 10.1002/aelm.202400266
Published: 02
Container: Advanced Electronic Materials
Publisher: Not recorded
Open access: yes

Credibility signals

uncertain Score 53/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

cautionDOI registered: No matching Crossref record was present in this response. Source: Crossref; license: CC0 metadata
cautionDOI resolves: No matching Crossref record was present in this response. Source: Crossref; license: CC0 metadata
supportingDirectory of Open Access Journals: A matching record was returned by DOAJ. Source: DOAJ; license: CC0
not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredROR affiliation: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
supportingOpen access status: Normalized open-access status: open. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
not scoredPublication license: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredPublication version: A publication version was supplied but is not scored. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer

Cite this work

BibTeX

@article{allodium:10.1002/aelm.202400266,
  title = {Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors},
  author = {Ke Hu and Zean Guo and Jiawei Wang and Congyan Lu and Mingliang Wang and Tianyuan Wang and Fuxi Liao and Guanhua Yang and Nianduan Lu and Ling Li},
  year = {2025},
  journal = {Advanced Electronic Materials},
  doi = {10.1002/aelm.202400266},
  url = {https://doi.org/10.1002/aelm.202400266}
}

RIS

TY  - JOUR
TI  - Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors
AU  - Ke Hu
AU  - Zean Guo
AU  - Jiawei Wang
AU  - Congyan Lu
AU  - Mingliang Wang
AU  - Tianyuan Wang
AU  - Fuxi Liao
AU  - Guanhua Yang
AU  - Nianduan Lu
AU  - Ling Li
PY  - 2025
JO  - Advanced Electronic Materials
DO  - 10.1002/aelm.202400266
UR  - https://doi.org/10.1002/aelm.202400266
ER  -

APA

Hu, K., Guo, Z., Wang, J., Lu, C., Wang, M., Wang, T., Liao, F., Yang, G., Lu, N., & Li, L. (2025). Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors. Advanced Electronic Materials. https://doi.org/10.1002/aelm.202400266

Source records

doaj · retrieved 2026-11-10T14:31:23.917Z