Chiral Magnetic Memory Device at the 10 Nm Scale Using Self‐Assembly Nano Floret Electrodes

Sheli Muzafe Reiss, Salma Khaldi, Omer Shoseyov, Shira Yochelis, Roie Yerushalmi, Yossi Paltiel

Open source

DOI: 10.1002/aelm.202400919
Published: 07
Container: Advanced Electronic Materials
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/aelm.202400919,
  title = {Chiral Magnetic Memory Device at the 10 Nm Scale Using Self‐Assembly Nano Floret Electrodes},
  author = {Sheli Muzafe Reiss and Salma Khaldi and Omer Shoseyov and Shira Yochelis and Roie Yerushalmi and Yossi Paltiel},
  year = {2025},
  journal = {Advanced Electronic Materials},
  doi = {10.1002/aelm.202400919},
  url = {https://doi.org/10.1002/aelm.202400919}
}

RIS

TY  - JOUR
TI  - Chiral Magnetic Memory Device at the 10 Nm Scale Using Self‐Assembly Nano Floret Electrodes
AU  - Sheli Muzafe Reiss
AU  - Salma Khaldi
AU  - Omer Shoseyov
AU  - Shira Yochelis
AU  - Roie Yerushalmi
AU  - Yossi Paltiel
PY  - 2025
JO  - Advanced Electronic Materials
DO  - 10.1002/aelm.202400919
UR  - https://doi.org/10.1002/aelm.202400919
ER  -

APA

Reiss, S. M., Khaldi, S., Shoseyov, O., Yochelis, S., Yerushalmi, R., & Paltiel, Y. (2025). Chiral Magnetic Memory Device at the 10 Nm Scale Using Self‐Assembly Nano Floret Electrodes. Advanced Electronic Materials. https://doi.org/10.1002/aelm.202400919

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doaj · retrieved 2026-09-25T01:05:33.201Z