Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios

Sehyeon Choi, Yunseo Lim, Sejin Kim, San Park, Boncheol Ku, Hyungjun Kim, Jaehyun Yang, Bio Kim, Youngseon Son, Hanmei Choi, Changhwan Choi

Open source

DOI: 10.1002/aelm.202400960
Published: 09
Container: Advanced Electronic Materials
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/aelm.202400960,
  title = {Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios},
  author = {Sehyeon Choi and Yunseo Lim and Sejin Kim and San Park and Boncheol Ku and Hyungjun Kim and Jaehyun Yang and Bio Kim and Youngseon Son and Hanmei Choi and Changhwan Choi},
  year = {2025},
  journal = {Advanced Electronic Materials},
  doi = {10.1002/aelm.202400960},
  url = {https://doi.org/10.1002/aelm.202400960}
}

RIS

TY  - JOUR
TI  - Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios
AU  - Sehyeon Choi
AU  - Yunseo Lim
AU  - Sejin Kim
AU  - San Park
AU  - Boncheol Ku
AU  - Hyungjun Kim
AU  - Jaehyun Yang
AU  - Bio Kim
AU  - Youngseon Son
AU  - Hanmei Choi
AU  - Changhwan Choi
PY  - 2025
JO  - Advanced Electronic Materials
DO  - 10.1002/aelm.202400960
UR  - https://doi.org/10.1002/aelm.202400960
ER  -

APA

Choi, S., Lim, Y., Kim, S., Park, S., Ku, B., Kim, H., Yang, J., Kim, B., Son, Y., Choi, H., & Choi, C. (2025). Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios. Advanced Electronic Materials. https://doi.org/10.1002/aelm.202400960

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doaj · retrieved 2026-09-25T02:39:29.497Z