Atomic Layer Deposition of Disordered p‐Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P‐Channel SnO Thin‐Film Transistor Characteristics
- DOI
- 10.1002/aelm.202500853
- Published
- 2026-04-20
- Container
- Advanced Electronic Materials
- Publisher
- Wiley
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/aelm.202500853,
title = {Atomic Layer Deposition of Disordered p‐Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P‐Channel SnO Thin‐Film Transistor Characteristics},
author = {Benjamin J. Peek and Kham Man Niang and Benjamin McMitchell and Heath Bagshaw and Karl Dawson and Adrian Gardner and Babak Bakhit and James D. Parish and Oliver W. S. Clark and Joe C. Goodall and Andrew Brookes and Satyajit Das and Feras Alkhalil and Andrew L. Johnson and Andrew J. Flewitt and Paul R. Chalker},
year = {2026},
journal = {Advanced Electronic Materials},
doi = {10.1002/aelm.202500853},
url = {https://doi.org/10.1002/aelm.202500853}
}RIS
TY - JOUR TI - Atomic Layer Deposition of Disordered p‐Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P‐Channel SnO Thin‐Film Transistor Characteristics AU - Benjamin J. Peek AU - Kham Man Niang AU - Benjamin McMitchell AU - Heath Bagshaw AU - Karl Dawson AU - Adrian Gardner AU - Babak Bakhit AU - James D. Parish AU - Oliver W. S. Clark AU - Joe C. Goodall AU - Andrew Brookes AU - Satyajit Das AU - Feras Alkhalil AU - Andrew L. Johnson AU - Andrew J. Flewitt AU - Paul R. Chalker PY - 2026 JO - Advanced Electronic Materials DO - 10.1002/aelm.202500853 UR - https://doi.org/10.1002/aelm.202500853 ER -
APA
Peek, B. J., Niang, K. M., McMitchell, B., Bagshaw, H., Dawson, K., Gardner, A., Bakhit, B., Parish, J. D., Clark, O. W. S., Goodall, J. C., Brookes, A., Das, S., Alkhalil, F., Johnson, A. L., Flewitt, A. J., & Chalker, P. R. (2026). Atomic Layer Deposition of Disordered p‐Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P‐Channel SnO Thin‐Film Transistor Characteristics. Advanced Electronic Materials. https://doi.org/10.1002/aelm.202500853
Source records
- crossref · retrieved 2026-11-10T08:46:54.984Z