Lead-Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High-Performance Thermoelectric AgSbTe(2).

Han Y, Liu X, Liu X, Chen L, Wu LM

Open source

DOI
10.1002/anie.2554196
Published
2026 May 11
Container
Angewandte Chemie (International ed. in English)
Publisher
Not recorded
Open access
no

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BibTeX

@article{allodium:10.1002/anie.2554196,
  title = {Lead-Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High-Performance Thermoelectric AgSbTe(2).},
  author = {Han Y and Liu X and Liu X and Chen L and Wu LM},
  year = {2026},
  journal = {Angewandte Chemie (International ed. in English)},
  doi = {10.1002/anie.2554196},
  url = {https://doi.org/10.1002/anie.2554196}
}

RIS

TY  - JOUR
TI  - Lead-Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High-Performance Thermoelectric AgSbTe(2).
AU  - Han Y
AU  - Liu X
AU  - Liu X
AU  - Chen L
AU  - Wu LM
PY  - 2026
JO  - Angewandte Chemie (International ed. in English)
DO  - 10.1002/anie.2554196
UR  - https://doi.org/10.1002/anie.2554196
ER  - 

APA

Y, H., X, L., X, L., L, C., & LM, W. (2026). Lead-Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High-Performance Thermoelectric AgSbTe(2).. Angewandte Chemie (International ed. in English). https://doi.org/10.1002/anie.2554196

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