Lead‐Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High‐Performance Thermoelectric AgSbTe <sub>2</sub>

Yunchong Han, Xin Liu, Xinyu Liu, Ling Chen, Li‐Ming Wu

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DOI: 10.1002/anie.2554196
Published: 2026-04-02
Container: Angewandte Chemie International Edition
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/anie.2554196,
  title = {Lead‐Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High‐Performance Thermoelectric AgSbTe
                    <sub>2</sub>},
  author = {Yunchong Han and Xin Liu and Xinyu Liu and Ling Chen and Li‐Ming Wu},
  year = {2026},
  journal = {Angewandte Chemie International Edition},
  doi = {10.1002/anie.2554196},
  url = {https://doi.org/10.1002/anie.2554196}
}

RIS

TY  - JOUR
TI  - Lead‐Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High‐Performance Thermoelectric AgSbTe
                    <sub>2</sub>
AU  - Yunchong Han
AU  - Xin Liu
AU  - Xinyu Liu
AU  - Ling Chen
AU  - Li‐Ming Wu
PY  - 2026
JO  - Angewandte Chemie International Edition
DO  - 10.1002/anie.2554196
UR  - https://doi.org/10.1002/anie.2554196
ER  -

APA

Han, Y., Liu, X., Liu, X., Chen, L., & Wu, L. (2026). Lead‐Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High‐Performance Thermoelectric AgSbTe <sub>2</sub>. Angewandte Chemie International Edition. https://doi.org/10.1002/anie.2554196

Source records

crossref · retrieved 2026-11-10T06:39:30.411Z