Lead-Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High-Performance Thermoelectric AgSbTe(2).
- DOI
- 10.1002/anie.2554196
- Published
- 2026 May 11
- Container
- Angewandte Chemie (International ed. in English)
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1002/anie.2554196,
title = {Lead-Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High-Performance Thermoelectric AgSbTe(2).},
author = {Han Y and Liu X and Liu X and Chen L and Wu LM},
year = {2026},
journal = {Angewandte Chemie (International ed. in English)},
doi = {10.1002/anie.2554196},
url = {https://doi.org/10.1002/anie.2554196}
}RIS
TY - JOUR TI - Lead-Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High-Performance Thermoelectric AgSbTe(2). AU - Han Y AU - Liu X AU - Liu X AU - Chen L AU - Wu LM PY - 2026 JO - Angewandte Chemie (International ed. in English) DO - 10.1002/anie.2554196 UR - https://doi.org/10.1002/anie.2554196 ER -
APA
Y, H., X, L., X, L., L, C., & LM, W. (2026). Lead-Doping Enabled Band Engineering and Phonon Transport Modulation: Key to High-Performance Thermoelectric AgSbTe(2).. Angewandte Chemie (International ed. in English). https://doi.org/10.1002/anie.2554196
Source records
- pubmed · retrieved 2026-09-25T12:16:11.487Z
- europe-pmc · retrieved 2026-09-25T12:16:11.813Z