Five-Boron Multiple-Resonance TADF Emitter With Accelerated Reverse Intersystem Crossing for High-Performance Narrowband Green OLEDs.

Lee T, Ochi J, Zhang Z, Kondo Y, Kondo M, Hatakeyama T

DOI: 10.1002/anie.3413163
Published: 2026 Sep 10
Container: Angewandte Chemie (International ed. in English)
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/anie.3413163,
  title = {Five-Boron Multiple-Resonance TADF Emitter With Accelerated Reverse Intersystem Crossing for High-Performance Narrowband Green OLEDs.},
  author = {Lee T and Ochi J and Zhang Z and Kondo Y and Kondo M and Hatakeyama T},
  year = {2026},
  journal = {Angewandte Chemie (International ed. in English)},
  doi = {10.1002/anie.3413163},
  url = {https://doi.org/10.1002/anie.3413163}
}

RIS

TY  - JOUR
TI  - Five-Boron Multiple-Resonance TADF Emitter With Accelerated Reverse Intersystem Crossing for High-Performance Narrowband Green OLEDs.
AU  - Lee T
AU  - Ochi J
AU  - Zhang Z
AU  - Kondo Y
AU  - Kondo M
AU  - Hatakeyama T
PY  - 2026
JO  - Angewandte Chemie (International ed. in English)
DO  - 10.1002/anie.3413163
UR  - https://doi.org/10.1002/anie.3413163
ER  -

APA

T, L., J, O., Z, Z., Y, K., M, K., & T, H. (2026). Five-Boron Multiple-Resonance TADF Emitter With Accelerated Reverse Intersystem Crossing for High-Performance Narrowband Green OLEDs.. Angewandte Chemie (International ed. in English). https://doi.org/10.1002/anie.3413163

Source records

pubmed · retrieved 2026-09-25T10:20:01.981Z