Photocapacitance study of n‐GaAs/electrolyte interfaces

Philippe Allongue, Hubert Cachet

DOI: 10.1002/bbpc.19870910430
Published: 1987
Container: Berichte der Bunsengesellschaft für physikalische Chemie
Publisher: Not recorded
Open access: no

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limited evidence Score 43/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

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Cite this work

BibTeX

@article{allodium:10.1002/bbpc.19870910430,
  title = {Photocapacitance study of n‐GaAs/electrolyte interfaces},
  author = {Philippe Allongue and Hubert Cachet},
  year = {1987},
  journal = {Berichte der Bunsengesellschaft für physikalische Chemie},
  doi = {10.1002/bbpc.19870910430},
  url = {https://doi.org/10.1002/bbpc.19870910430}
}

RIS

TY  - JOUR
TI  - Photocapacitance study of n‐GaAs/electrolyte interfaces
AU  - Philippe Allongue
AU  - Hubert Cachet
PY  - 1987
JO  - Berichte der Bunsengesellschaft für physikalische Chemie
DO  - 10.1002/bbpc.19870910430
UR  - https://doi.org/10.1002/bbpc.19870910430
ER  -

APA

Allongue, P., & Cachet, H. (1987). Photocapacitance study of n‐GaAs/electrolyte interfaces. Berichte der Bunsengesellschaft für physikalische Chemie. https://doi.org/10.1002/bbpc.19870910430

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hal · retrieved 2026-09-27T13:12:48.282Z