Metal Porphyrin‐Terminated Hyperbranched Polyimides for Resistive Switching in Nonvolatile Memory Devices

Panpan Zheng, Yiran Xu, Long Li, Yang Shen, Tingting Yang, Ying Song, Xijia Yang

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DOI: 10.1002/cphc.202500320
Published: 2025-09-03
Container: ChemPhysChem
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/cphc.202500320,
  title = {Metal Porphyrin‐Terminated Hyperbranched Polyimides for Resistive Switching in Nonvolatile Memory Devices},
  author = {Panpan Zheng and Yiran Xu and Long Li and Yang Shen and Tingting Yang and Ying Song and Xijia Yang},
  year = {2025},
  journal = {ChemPhysChem},
  doi = {10.1002/cphc.202500320},
  url = {https://doi.org/10.1002/cphc.202500320}
}

RIS

TY  - JOUR
TI  - Metal Porphyrin‐Terminated Hyperbranched Polyimides for Resistive Switching in Nonvolatile Memory Devices
AU  - Panpan Zheng
AU  - Yiran Xu
AU  - Long Li
AU  - Yang Shen
AU  - Tingting Yang
AU  - Ying Song
AU  - Xijia Yang
PY  - 2025
JO  - ChemPhysChem
DO  - 10.1002/cphc.202500320
UR  - https://doi.org/10.1002/cphc.202500320
ER  -

APA

Zheng, P., Xu, Y., Li, L., Shen, Y., Yang, T., Song, Y., & Yang, X. (2025). Metal Porphyrin‐Terminated Hyperbranched Polyimides for Resistive Switching in Nonvolatile Memory Devices. ChemPhysChem. https://doi.org/10.1002/cphc.202500320

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crossref · retrieved 2026-09-26T00:27:03.518Z