Efficient silicon nitride SiN<sub>x</sub>:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells
- DOI
- 10.1002/pip.3141
- Published
- 2019-06-06
- Container
- Progress in Photovoltaics: Research and Applications
- Publisher
- Wiley
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/pip.3141,
title = {Efficient silicon nitride SiN<sub>x</sub>:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells},
author = {Jean‐François Lelièvre and Bishal Kafle and Pierre Saint‐Cast and Paul Brunet and Romain Magnan and Emmanuel Hernandez and Sylvain Pouliquen and Françoise Massines},
year = {2019},
journal = {Progress in Photovoltaics: Research and Applications},
doi = {10.1002/pip.3141},
url = {https://doi.org/10.1002/pip.3141}
}RIS
TY - JOUR TI - Efficient silicon nitride SiN<sub>x</sub>:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells AU - Jean‐François Lelièvre AU - Bishal Kafle AU - Pierre Saint‐Cast AU - Paul Brunet AU - Romain Magnan AU - Emmanuel Hernandez AU - Sylvain Pouliquen AU - Françoise Massines PY - 2019 JO - Progress in Photovoltaics: Research and Applications DO - 10.1002/pip.3141 UR - https://doi.org/10.1002/pip.3141 ER -
APA
Lelièvre, J., Kafle, B., Saint‐Cast, P., Brunet, P., Magnan, R., Hernandez, E., Pouliquen, S., & Massines, F. (2019). Efficient silicon nitride SiN<sub>x</sub>:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells. Progress in Photovoltaics: Research and Applications. https://doi.org/10.1002/pip.3141
Source records
- crossref · retrieved 2026-11-09T12:33:53.269Z