Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.

Pristovsek M, Han Y, Zhu T, Frentrup M, Kappers MJ, Humphreys CJ, Kozlowski G, Maaskant P, Corbett B

DOI: 10.1002/pssb.201451591
Published: 2015 May
Container: Physica status solidi. B, Basic solid state physics : PSS
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/pssb.201451591,
  title = {Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.},
  author = {Pristovsek M and Han Y and Zhu T and Frentrup M and Kappers MJ and Humphreys CJ and Kozlowski G and Maaskant P and Corbett B},
  year = {2015},
  journal = {Physica status solidi. B, Basic solid state physics : PSS},
  doi = {10.1002/pssb.201451591},
  url = {https://doi.org/10.1002/pssb.201451591}
}

RIS

TY  - JOUR
TI  - Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.
AU  - Pristovsek M
AU  - Han Y
AU  - Zhu T
AU  - Frentrup M
AU  - Kappers MJ
AU  - Humphreys CJ
AU  - Kozlowski G
AU  - Maaskant P
AU  - Corbett B
PY  - 2015
JO  - Physica status solidi. B, Basic solid state physics : PSS
DO  - 10.1002/pssb.201451591
UR  - https://doi.org/10.1002/pssb.201451591
ER  -

APA

M, P., Y, H., T, Z., M, F., MJ, K., CJ, H., G, K., P, M., & B, C. (2015). Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.. Physica status solidi. B, Basic solid state physics : PSS. https://doi.org/10.1002/pssb.201451591

Source records

pubmed · retrieved 2026-09-26T17:28:49.720Z
europe-pmc · retrieved 2026-09-26T17:28:49.734Z