uGaN growth on laser patterned sapphire substrate: quality feature

Edgaras Jelmakas, Marius Alsys, Paulius Gečys, Darius Dobrovolskas, Arūnas Kadys, Gediminas Račiukaitis, Roland Tomašiūnas

Open source

DOI: 10.1002/pssc.201200445
Published: 2012-11-09
Container: physica status solidi c
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/pssc.201200445,
  title = {uGaN growth on laser patterned sapphire substrate: quality feature},
  author = {Edgaras Jelmakas and Marius Alsys and Paulius Gečys and Darius Dobrovolskas and Arūnas Kadys and Gediminas Račiukaitis and Roland Tomašiūnas},
  year = {2012},
  journal = {physica status solidi c},
  doi = {10.1002/pssc.201200445},
  url = {https://doi.org/10.1002/pssc.201200445}
}

RIS

TY  - JOUR
TI  - uGaN growth on laser patterned sapphire substrate: quality feature
AU  - Edgaras Jelmakas
AU  - Marius Alsys
AU  - Paulius Gečys
AU  - Darius Dobrovolskas
AU  - Arūnas Kadys
AU  - Gediminas Račiukaitis
AU  - Roland Tomašiūnas
PY  - 2012
JO  - physica status solidi c
DO  - 10.1002/pssc.201200445
UR  - https://doi.org/10.1002/pssc.201200445
ER  -

APA

Jelmakas, E., Alsys, M., Gečys, P., Dobrovolskas, D., Kadys, A., Račiukaitis, G., & Tomašiūnas, R. (2012). uGaN growth on laser patterned sapphire substrate: quality feature. physica status solidi c. https://doi.org/10.1002/pssc.201200445

Source records

crossref · retrieved 2026-09-25T08:57:01.270Z