WSe(2) Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing.

Pang CS, Chen CY, Ameen T, Zhang S, Ilatikhameneh H, Rahman R, Klimeck G, Chen Z

Open source

DOI
10.1002/smll.201902770
Published
2019 Oct
Container
Small (Weinheim an der Bergstrasse, Germany)
Publisher
Not recorded
Open access
no

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BibTeX

@article{allodium:10.1002/smll.201902770,
  title = {WSe(2) Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing.},
  author = {Pang CS and Chen CY and Ameen T and Zhang S and Ilatikhameneh H and Rahman R and Klimeck G and Chen Z},
  year = {2019},
  journal = {Small (Weinheim an der Bergstrasse, Germany)},
  doi = {10.1002/smll.201902770},
  url = {https://doi.org/10.1002/smll.201902770}
}

RIS

TY  - JOUR
TI  - WSe(2) Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing.
AU  - Pang CS
AU  - Chen CY
AU  - Ameen T
AU  - Zhang S
AU  - Ilatikhameneh H
AU  - Rahman R
AU  - Klimeck G
AU  - Chen Z
PY  - 2019
JO  - Small (Weinheim an der Bergstrasse, Germany)
DO  - 10.1002/smll.201902770
UR  - https://doi.org/10.1002/smll.201902770
ER  - 

APA

CS, P., CY, C., T, A., S, Z., H, I., R, R., G, K., & Z, C. (2019). WSe(2) Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing.. Small (Weinheim an der Bergstrasse, Germany). https://doi.org/10.1002/smll.201902770

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