High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing.
- DOI
- 10.1002/smll.202107301
- Published
- 2022 Sep
- Container
- Small (Weinheim an der Bergstrasse, Germany)
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/smll.202107301,
title = {High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing.},
author = {Xu R and Chen P and Zhou J and Li Y and Li Y and Zhu T and Cheng K and Chen D and Xie Z and Ye J and Liu B and Xiu X and Han P and Shi Y and Zhang R and Zheng Y},
year = {2022},
journal = {Small (Weinheim an der Bergstrasse, Germany)},
doi = {10.1002/smll.202107301},
url = {https://doi.org/10.1002/smll.202107301}
}RIS
TY - JOUR TI - High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing. AU - Xu R AU - Chen P AU - Zhou J AU - Li Y AU - Li Y AU - Zhu T AU - Cheng K AU - Chen D AU - Xie Z AU - Ye J AU - Liu B AU - Xiu X AU - Han P AU - Shi Y AU - Zhang R AU - Zheng Y PY - 2022 JO - Small (Weinheim an der Bergstrasse, Germany) DO - 10.1002/smll.202107301 UR - https://doi.org/10.1002/smll.202107301 ER -
APA
R, X., P, C., J, Z., Y, L., Y, L., T, Z., K, C., D, C., Z, X., J, Y., B, L., X, X., P, H., Y, S., R, Z., & Y, Z. (2022). High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing.. Small (Weinheim an der Bergstrasse, Germany). https://doi.org/10.1002/smll.202107301
Source records
- pubmed · retrieved 2026-09-27T15:01:10.623Z