CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin

Gihwan Hyun, Batyrbek Alimkhanuly, Donguk Seo, Minwoo Lee, Junseong Bae, Seunghyun Lee, Shubham Patil, Youngcheol Hwang, Arman Kadyrov, Hyungyu Yoo, Anupom Devnath, Yoonmyung Lee, Seunghyun Lee

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DOI: 10.1002/smll.202310943
Published: 2024-04-12
Container: Small
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/smll.202310943,
  title = {CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin},
  author = {Gihwan Hyun and Batyrbek Alimkhanuly and Donguk Seo and Minwoo Lee and Junseong Bae and Seunghyun Lee and Shubham Patil and Youngcheol Hwang and Arman Kadyrov and Hyungyu Yoo and Anupom Devnath and Yoonmyung Lee and Seunghyun Lee},
  year = {2024},
  journal = {Small},
  doi = {10.1002/smll.202310943},
  url = {https://doi.org/10.1002/smll.202310943}
}

RIS

TY  - JOUR
TI  - CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin
AU  - Gihwan Hyun
AU  - Batyrbek Alimkhanuly
AU  - Donguk Seo
AU  - Minwoo Lee
AU  - Junseong Bae
AU  - Seunghyun Lee
AU  - Shubham Patil
AU  - Youngcheol Hwang
AU  - Arman Kadyrov
AU  - Hyungyu Yoo
AU  - Anupom Devnath
AU  - Yoonmyung Lee
AU  - Seunghyun Lee
PY  - 2024
JO  - Small
DO  - 10.1002/smll.202310943
UR  - https://doi.org/10.1002/smll.202310943
ER  -

APA

Hyun, G., Alimkhanuly, B., Seo, D., Lee, M., Bae, J., Lee, S., Patil, S., Hwang, Y., Kadyrov, A., Yoo, H., Devnath, A., Lee, Y., & Lee, S. (2024). CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin. Small. https://doi.org/10.1002/smll.202310943

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crossref · retrieved 2026-11-10T09:33:04.398Z