Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WS(2) Nanosheet Field-Effect Transistors for Area-Efficient Integrated Circuit.
- DOI
- 10.1002/smll.202508533
- Published
- 2025 Oct
- Container
- Small (Weinheim an der Bergstrasse, Germany)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1002/smll.202508533,
title = {Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WS(2) Nanosheet Field-Effect Transistors for Area-Efficient Integrated Circuit.},
author = {Ma J and Yang E and Lee C and Seok J and Chang J},
year = {2025},
journal = {Small (Weinheim an der Bergstrasse, Germany)},
doi = {10.1002/smll.202508533},
url = {https://doi.org/10.1002/smll.202508533}
}RIS
TY - JOUR TI - Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WS(2) Nanosheet Field-Effect Transistors for Area-Efficient Integrated Circuit. AU - Ma J AU - Yang E AU - Lee C AU - Seok J AU - Chang J PY - 2025 JO - Small (Weinheim an der Bergstrasse, Germany) DO - 10.1002/smll.202508533 UR - https://doi.org/10.1002/smll.202508533 ER -
APA
J, M., E, Y., C, L., J, S., & J, C. (2025). Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WS(2) Nanosheet Field-Effect Transistors for Area-Efficient Integrated Circuit.. Small (Weinheim an der Bergstrasse, Germany). https://doi.org/10.1002/smll.202508533
Source records
- pubmed · retrieved 2026-09-26T00:29:11.983Z