Voltage‐Programmable Switching in Halide Perovskite Memristors by Asymmetric Contact Engineering

Yanwei Fan, Haichuan Ni, Jintian Pan, Deli Li, Qing Song, Yang Liu, Yue Wang, Yonghua Chen, Wei Huang

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DOI: 10.1002/smll.202514960
Published: 2026-06-16
Container: Small
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/smll.202514960,
  title = {Voltage‐Programmable Switching in Halide Perovskite Memristors by Asymmetric Contact Engineering},
  author = {Yanwei Fan and Haichuan Ni and Jintian Pan and Deli Li and Qing Song and Yang Liu and Yue Wang and Yonghua Chen and Wei Huang},
  year = {2026},
  journal = {Small},
  doi = {10.1002/smll.202514960},
  url = {https://doi.org/10.1002/smll.202514960}
}

RIS

TY  - JOUR
TI  - Voltage‐Programmable Switching in Halide Perovskite Memristors by Asymmetric Contact Engineering
AU  - Yanwei Fan
AU  - Haichuan Ni
AU  - Jintian Pan
AU  - Deli Li
AU  - Qing Song
AU  - Yang Liu
AU  - Yue Wang
AU  - Yonghua Chen
AU  - Wei Huang
PY  - 2026
JO  - Small
DO  - 10.1002/smll.202514960
UR  - https://doi.org/10.1002/smll.202514960
ER  -

APA

Fan, Y., Ni, H., Pan, J., Li, D., Song, Q., Liu, Y., Wang, Y., Chen, Y., & Huang, W. (2026). Voltage‐Programmable Switching in Halide Perovskite Memristors by Asymmetric Contact Engineering. Small. https://doi.org/10.1002/smll.202514960

Source records

crossref · retrieved 2026-09-25T21:34:52.505Z