Ultrawide Charge-Trap Memory Window and Photoinduced Synaptic Behavior in p-Channel Amorphous Oxide Semiconductors.

Bang S, Choi D, Suh HC, Lee C, Lim S, Yu YJ, Kim DH, Kim SH, Yoo J, Kim T, Lee D, Park HJ, Kim UJ, Yi DJ, Oh H, Kim DW, Jeong MS

Open source

DOI: 10.1002/smll.74713
Published: 2026 Sep
Container: Small (Weinheim an der Bergstrasse, Germany)
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/smll.74713,
  title = {Ultrawide Charge-Trap Memory Window and Photoinduced Synaptic Behavior in p-Channel Amorphous Oxide Semiconductors.},
  author = {Bang S and Choi D and Suh HC and Lee C and Lim S and Yu YJ and Kim DH and Kim SH and Yoo J and Kim T and Lee D and Park HJ and Kim UJ and Yi DJ and Oh H and Kim DW and Jeong MS},
  year = {2026},
  journal = {Small (Weinheim an der Bergstrasse, Germany)},
  doi = {10.1002/smll.74713},
  url = {https://doi.org/10.1002/smll.74713}
}

RIS

TY  - JOUR
TI  - Ultrawide Charge-Trap Memory Window and Photoinduced Synaptic Behavior in p-Channel Amorphous Oxide Semiconductors.
AU  - Bang S
AU  - Choi D
AU  - Suh HC
AU  - Lee C
AU  - Lim S
AU  - Yu YJ
AU  - Kim DH
AU  - Kim SH
AU  - Yoo J
AU  - Kim T
AU  - Lee D
AU  - Park HJ
AU  - Kim UJ
AU  - Yi DJ
AU  - Oh H
AU  - Kim DW
AU  - Jeong MS
PY  - 2026
JO  - Small (Weinheim an der Bergstrasse, Germany)
DO  - 10.1002/smll.74713
UR  - https://doi.org/10.1002/smll.74713
ER  -

APA

S, B., D, C., HC, S., C, L., S, L., YJ, Y., DH, K., SH, K., J, Y., T, K., D, L., HJ, P., UJ, K., DJ, Y., H, O., DW, K., & MS, J. (2026). Ultrawide Charge-Trap Memory Window and Photoinduced Synaptic Behavior in p-Channel Amorphous Oxide Semiconductors.. Small (Weinheim an der Bergstrasse, Germany). https://doi.org/10.1002/smll.74713

Source records

pubmed · retrieved 2026-11-10T14:30:52.616Z