Reconfigurable Ferroelectric Field-Effect Transistor Integrating Freestanding BaTiO(3) and MoS(2) for Neuromorphic Computing.
- DOI
- 10.1002/smll.74775
- Published
- 2026 Sep
- Container
- Small (Weinheim an der Bergstrasse, Germany)
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/smll.74775,
title = {Reconfigurable Ferroelectric Field-Effect Transistor Integrating Freestanding BaTiO(3) and MoS(2) for Neuromorphic Computing.},
author = {Chen Z and Xiao Y and Du Y and Chen H and Yang Y and Li Z and Li W and Lin X and Li Y and Tang L and Liao S and Liang Q and Ji D and Chai Y and Nie Y},
year = {2026},
journal = {Small (Weinheim an der Bergstrasse, Germany)},
doi = {10.1002/smll.74775},
url = {https://doi.org/10.1002/smll.74775}
}RIS
TY - JOUR TI - Reconfigurable Ferroelectric Field-Effect Transistor Integrating Freestanding BaTiO(3) and MoS(2) for Neuromorphic Computing. AU - Chen Z AU - Xiao Y AU - Du Y AU - Chen H AU - Yang Y AU - Li Z AU - Li W AU - Lin X AU - Li Y AU - Tang L AU - Liao S AU - Liang Q AU - Ji D AU - Chai Y AU - Nie Y PY - 2026 JO - Small (Weinheim an der Bergstrasse, Germany) DO - 10.1002/smll.74775 UR - https://doi.org/10.1002/smll.74775 ER -
APA
Z, C., Y, X., Y, D., H, C., Y, Y., Z, L., W, L., X, L., Y, L., L, T., S, L., Q, L., D, J., Y, C., & Y, N. (2026). Reconfigurable Ferroelectric Field-Effect Transistor Integrating Freestanding BaTiO(3) and MoS(2) for Neuromorphic Computing.. Small (Weinheim an der Bergstrasse, Germany). https://doi.org/10.1002/smll.74775
Source records
- pubmed · retrieved 2026-09-24T19:44:28.869Z