2D Electron Gas and Jahn-Teller Synergy Enables Al(3+) Migration at Oxide Heterointerfaces: Interfacial Engineering for Tunable Oxide Electronics.

Ding K, Deng W, Bi S, Zhao P, Chang A, Xie Y

Open source

DOI
10.1002/smll.74997
Published
2026 Sep 2
Container
Small (Weinheim an der Bergstrasse, Germany)
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1002/smll.74997,
  title = {2D Electron Gas and Jahn-Teller Synergy Enables Al(3+) Migration at Oxide Heterointerfaces: Interfacial Engineering for Tunable Oxide Electronics.},
  author = {Ding K and Deng W and Bi S and Zhao P and Chang A and Xie Y},
  year = {2026},
  journal = {Small (Weinheim an der Bergstrasse, Germany)},
  doi = {10.1002/smll.74997},
  url = {https://doi.org/10.1002/smll.74997}
}

RIS

TY  - JOUR
TI  - 2D Electron Gas and Jahn-Teller Synergy Enables Al(3+) Migration at Oxide Heterointerfaces: Interfacial Engineering for Tunable Oxide Electronics.
AU  - Ding K
AU  - Deng W
AU  - Bi S
AU  - Zhao P
AU  - Chang A
AU  - Xie Y
PY  - 2026
JO  - Small (Weinheim an der Bergstrasse, Germany)
DO  - 10.1002/smll.74997
UR  - https://doi.org/10.1002/smll.74997
ER  - 

APA

K, D., W, D., S, B., P, Z., A, C., & Y, X. (2026). 2D Electron Gas and Jahn-Teller Synergy Enables Al(3+) Migration at Oxide Heterointerfaces: Interfacial Engineering for Tunable Oxide Electronics.. Small (Weinheim an der Bergstrasse, Germany). https://doi.org/10.1002/smll.74997

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