A Review on Emerging High-k Dielectrics for Charge Trapping Memory: Fundamentals, Fabrication, Modification and Applications.

Niu H, Fan M, Lv L, Wan H, Ma G, Wang H

DOI: 10.1002/smll.75278
Published: 2026 Aug 18
Container: Small (Weinheim an der Bergstrasse, Germany)
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1002/smll.75278,
  title = {A Review on Emerging High-k Dielectrics for Charge Trapping Memory: Fundamentals, Fabrication, Modification and Applications.},
  author = {Niu H and Fan M and Lv L and Wan H and Ma G and Wang H},
  year = {2026},
  journal = {Small (Weinheim an der Bergstrasse, Germany)},
  doi = {10.1002/smll.75278},
  url = {https://doi.org/10.1002/smll.75278}
}

RIS

TY  - JOUR
TI  - A Review on Emerging High-k Dielectrics for Charge Trapping Memory: Fundamentals, Fabrication, Modification and Applications.
AU  - Niu H
AU  - Fan M
AU  - Lv L
AU  - Wan H
AU  - Ma G
AU  - Wang H
PY  - 2026
JO  - Small (Weinheim an der Bergstrasse, Germany)
DO  - 10.1002/smll.75278
UR  - https://doi.org/10.1002/smll.75278
ER  -

APA

H, N., M, F., L, L., H, W., G, M., & H, W. (2026). A Review on Emerging High-k Dielectrics for Charge Trapping Memory: Fundamentals, Fabrication, Modification and Applications.. Small (Weinheim an der Bergstrasse, Germany). https://doi.org/10.1002/smll.75278

Source records

pubmed · retrieved 2026-09-25T15:27:40.049Z
europe-pmc · retrieved 2026-09-25T15:27:40.095Z